ON SEMICONDUCTOR MJ11033G Bipolar (BJT) Single Transistor, PNP, -120 V, 300 W, -50 A, 400 hFE External Drives Exterior: 9

Exterior: 9

3mm Insert diameter

of Pins 2Pins Breakdown Voltage Min 36

Safe for long-term storage

ON SEMICONDUCTOR MJ11033G Bipolar (BJT) Single Transistor, PNP, -120 V, 300 W, -50 A, 400 hFE External Drives Exterior: 9The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built in base emitter shunt resistor. High DC current gain Diode protection to rated IC Applications Industrial, Power Management Product details Power Dissipation Pd 300W DC Collector Current 50A Collector Emitter Voltage V(br)ceo 120V